Polycrystalline Gallium Arsenide Standard Specifications

HB poly GaAs
Polycrystalline ingots are produced by reacting of Ga and As (at least 99.9999 % pure) together in a fused silica boat and crystallization by Bridgman method.

LEC poly GaAs

Polycrystalline ingots are produced by reacting of Ga and As (at least 99.9999 % pure) together in PBN crucible at high inert gas pressure and subsequent pulling by LEC technique in low inert gas pressure furnace

Parameters of poly crystal material

Dopant:                                          none
Carrier concentration, cm^-3:      1x10¹⁶
Purity*, %:                                   99.9999

* Typical Spark Source (SSMS) analysis is supplied on the customers request.
SSMS analysis for specific butches is provided for an extra charge.

Dimensions

Poly-GaAs is available in form of whole ingots or ingot sections with cross-dimension up to 80mm and also as thick wafers or crashed granules.

Polycrystalline ingots are shaped according to customer requirements, cleaned and packed, and all batches are supplied with a complete Certificate of Compliance