Indium Antimonide Standard Specifications

InSb

Indium Antimonide

Standard specifications*

Single crystals

Dopant

Undoped

Te

Ge

Type of conductivity

n

n

p

Carrier concentration (77K), cm^-3

(3 - 9)x10¹⁴

7x10¹⁴ - 1x10¹⁸

1x10¹⁵ - 5x10¹⁸

Mobility (77K), cm²/V.s

> 4x10⁵

4x10⁵ - 2x10⁴

6.5x10³ - 1x10²

EPD, cm^-2

<200

Wafers

Diameter, mm

50.8 ± 0.3

Thickness, micron

450 ± 15

Surface orientation

(100)

Orientation tolerance

± 0.5°        ± 0.1°

Off orientation

(1 - 10) ± 0.1° towards the specified face

Primary and secondary flats

according to SEMI M9 Standard (US SEMI or E/J SEMI) for (100), for other orientation - according to customer choice

Surface finishing
              face side
              back side

"epi-ready" polished
polished or lapped and etched

Packing

Single wafer container sealed in two bags: inner bag – vaccumized, outer bag – inert gas filed

* Single crystals and wafers with nonstandard specifications are available upon request.

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GIRMET Ltd. 5, B.Tolmachevsky per., Moscow 119017, Russia
Tel: (7 495)956-0918, fax: (7 495)956-4944
E-mail: sales@girmet.com


		*InSb*
*Indium Antimonide*
Standard specifications*
Single crystals

Dopant	Undoped	Te	Ge
Type of conductivity	n	n	p
Carrier concentration (77K), cm^-3	(3 - 9)x10¹⁴	7x10¹⁴ - 1x10¹⁸	1x10¹⁵ - 5x10¹⁸
Mobility (77K), cm²/V.s	> 4x10⁵	4x10⁵ - 2x10⁴	6.5x10³ - 1x10²
EPD, cm^-2	<200

Diameter, mm	50.8 ± 0.3
Thickness, micron	450 ± 15
Surface orientation	(100)
Orientation tolerance	± 0.5° ± 0.1°
Off orientation	(1 - 10) ± 0.1° towards the specified face
Primary and secondary flats	according to SEMI M9 Standard (US SEMI or E/J SEMI) for (100), for other orientation - according to customer choice
Surface finishing face side back side	"epi-ready" polished polished or lapped and etched
Packing	Single wafer container sealed in two bags: inner bag – vaccumized, outer bag – inert gas filed