Indium Arsenide Standard Specifications

InAs

Indium Arsenide

Standard specifications*

Single crystals

Dopant
Undoped

S or Sn

Zn

Type of conductivity
n

n

p

Carrier concentration,
cm^-3
(1-3)x10¹⁶

1x10¹⁷ - 3x10¹⁸

5x10¹⁶ - 5x10¹⁸

Mobility, cm²/V.s
>20000

>10000

>100

EPD, cm^-2
<5x10⁴

Wafers

Diameter, mm
50.8 ± 0.3    76.2 ± 0.3 for S-doped, (100) only

Thickness,mm
450 ± 15

Surface orientation
(100)   (111)

Orientation tolerance
   ± 0.5°          ± 0.1°

Off orientation

(1 - 10) ± 0.1° towards the specified face

Primary and secondary flats according to SEMI M9 Standard (US SEMI or E/J SEMI) for (100), for other orientation - according to customer choice

Surface finishing
                      face side
                      back side
"epi-ready" polished
polished or lapped and etched

Packing
Single wafer container sealed in two bags: inner bag – vaccumized, outer bag – inert gas filed

* Single crystals and wafers with nonstandard specifications are available upon request.

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		InAs
*Indium Arsenide*
Standard specifications*
Single crystals

Dopant	Undoped	S or Sn	Zn
Type of conductivity	n	n	p
Carrier concentration, cm^-3	(1-3)x10¹⁶	1x10¹⁷ - 3x10¹⁸	5x10¹⁶ - 5x10¹⁸
Mobility, cm²/V.s	>20000	>10000	>100
EPD, cm^-2	<5x10⁴

Diameter, mm	50.8 ± 0.3 76.2 ± 0.3 for S-doped, (100) only
Thickness,mm	450 ± 15
Surface orientation	(100) (111)
Orientation tolerance	± 0.5° ± 0.1°
Off orientation	(1 - 10) ± 0.1° towards the specified face
Primary and secondary flats	according to SEMI M9 Standard (US SEMI or E/J SEMI) for (100), for other orientation - according to customer choice
Surface finishing face side back side	"epi-ready" polished polished or lapped and etched
Packing	Single wafer container sealed in two bags: inner bag – vaccumized, outer bag – inert gas filed