Gallium Antimonide wafer crystal substrate
 
 

GaSb
Gallium Antimonide 
Standard specifications*
Single crystals
Dopant
Undoped
Te
Si or Ge
Type of conductivity
p
n
p
Carrier concentration, cm-3
<2x1016 (77K)
2x1017 - 1.5x1018
3x1017 - 1x1019
Mobility, cm2/V.s 
>2000 (77K)
3500 - 2500
1000 - 250
EPD, cm-2
<5x103
<2x103
< 2x103

 

Wafers
Diameter, mm
50.8 ± 0.3
Thickness, mm
450 ± 15
Surface orientation
(100)
Orientation tolerance
± 0.5°         ± 0.1°
Off orientation
(1 - 10) ± 0.1° towards the specified face
Primary and secondary flats
according to SEMI M9 Standard (US SEMI or E/J SEMI) for (100), for other orientation-according to customer choice
Surface finishing
              face side
              back side

"epi-ready"  polished
polished or lapped and etched
Packing

Single wafer container sealed in two bags: inner bag – vaccumized, outer bag – inert gas filed

* Single crystals and wafers with nonstandard specifications are available upon request. 

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GIRMET Ltd.  5, B.Tolmachevsky per., Moscow 119017, Russia
Tel: (7 495)956-0918, fax: (7 495)956-4944
E-mail: sales@girmet.com