Gallium Phosphide,  GaP Standard specifications*

 

Single Crystals

Dopant
Undoped
S
Zn
Cr (SI)
  
Type of conductivity
n
n
p
i
  
Carrier concentration, cm-3
<1x1016
1x1017 - 2x1018
1x1017 - 2x1018
-
  
Resistivity, Ohm/cm
-
-
-
>106
  
Mobility, cm2/V.s
>100
>60
>60
>80
  
EPD, cm-2
<2x105
<2x105
<2x105
<2x105
  


Wafers
Diameter, mm
50.8 ± 0.3        76.2 ± 0.3
Thickness, mm
300 ± 15          400 ± 15
Surface orientation
    (100)             (111) 
Orientation tolerance
± 0.5°          ± 0.1°
Off orientation
(1 - 10) ± 0.1° towards the specified face
Primary and secondary flats
according to SEMI M9 Standard (US SEMI or E/J SEMI) for (100), for other orientation - according to customer choice
Surface finishing
                      face side
                      back side

"epi-ready"  polished
polished or lapped and etched
Packing
Single wafer container sealed in two bags: inner bag – vaccumized, outer bag – inert gas filed

* Single crystals and wafers with nonstandard specifications are available upon request. 

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Tel: (7 495)956-0918, fax: (7 495)956-4944
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