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GaAs Gallium Arsenide Standard specifications* Vertical Gradient Freeze (VGF) Single Crystals
Material Semiinsulating SemiconductingDopant Undoped Si ZnType of conductivity n n pCarrier concentration, cm-3 - 5x1017 - 3x1018 5x1018 - 3x1019Specific Resistivity, Ohm.cm >1x107 - -Mobility, cm2/V.s >5000 2400-1200 70-40EPD, cm-2
Ø50.8 mm
<5000
<500 or <5000 <500 or <5000
Liquid Encapsulated Czochralski (LEC) Single Crystals
| Material | Semiinsulating |
Semiconducting |
||
| Dopant | Undoped |
Si or Te |
Zn |
|
| Type of conductivity |
n |
n |
p |
|
| Carrier concentration, cm-3 | - |
1x1017 - 3x1018 |
1x1017 - 3x1019 |
|
| Specific Resistivity, Ohm.cm | >1x107 |
- |
- |
|
| Mobility, cm2/V.s | >5000 |
4200-1200 |
170-40 |
|
EPD, cm-2 |
Ø50.8 mm Ø76.2 mm |
<5x104 or <8x104 <8x104 or <1x105 |
<5x104 or <8x104 <8x104 or <1x105 |
<5x104 or <8x104 <8x104 or <1x105 |
|
|
| Diameter, mm | 50.8 ± 0.3 , 76.2± 0.3 |
| Thickness, mm | 350 ± 15, 400 ± 15 ,450 ± 15, 500 ± 15 |
| Surface orientation | (100), (111), (110), (211), (310) |
| Orientation tolerance | ± 0.5° ± 0.1° |
Off orientation |
(1 - 10) ± 0.1° towards the specified face |
| Primary and secondary flats | according to SEMI M9 Standard (US SEMI or E/J SEMI) for (100), for other orientation-according to customer choice |
| Surface finishing face side back side |
"epi-ready" polished polished or lapped and etched |
| Packing | Single wafer container sealed in two bags: inner bag – vaccumized, outer bag – inert gas filed |
* Single crystals and wafers with nonstandard specifications are available upon request.
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