Gallium Arsenide wafer crystal substrate
 
 

GaAs
Gallium Arsenide
Standard specifications*

Vertical Gradient Freeze (VGF) Single Crystals

Material
Semiinsulating
Semiconducting
Dopant
Undoped
Si
Zn
Type of conductivity
n
n
p
Carrier concentration, cm-3
-
5x1017 - 3x1018
5x1018 - 3x1019
Specific Resistivity, Ohm.cm
>1x107
-
-
Mobility, cm2/V.s
>5000
2400-1200
70-40

EPD, cm-2

Ø50.8 mm
<5000
<500 or <5000
<500 or <5000


Liquid Encapsulated Czochralski (LEC) Single Crystals

Material
Semiinsulating
Semiconducting
Dopant
Undoped
Si or Te
Zn
Type of conductivity
n
n
p
Carrier concentration, cm-3
-
1x1017 - 3x1018
1x1017 - 3x1019
Specific Resistivity, Ohm.cm
>1x107
-
-
Mobility, cm2/V.s
>5000
4200-1200
170-40

EPD, cm-2

Ø50.8 mm
Ø76.2 mm
<5x104 or <8x104
<8x104 or <1x105
<5x104 or <8x104
<8x104 or <1x105
<5x104 or <8x104
<8x104 or <1x105


Wafers

Diameter, mm
50.8 ± 0.3 , 76.2± 0.3
Thickness, mm
350 ± 15, 400 ± 15 ,450 ± 15, 500 ± 15  
Surface orientation
(100), (111), (110), (211), (310)
Orientation tolerance
   ± 0.5°          ± 0.1°
Off orientation
(1 - 10) ± 0.1° towards the specified face
Primary and secondary flats
according to SEMI M9 Standard (US SEMI or E/J SEMI) for (100), for other orientation-according to customer choice
Surface finishing
                      face side
                      back side

"epi-ready"  polished
polished or lapped and etched
Packing
Single wafer container sealed in two bags: inner bag – vaccumized, outer bag – inert gas filed

* Single crystals and wafers with nonstandard specifications are available upon request. 

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GIRMET Ltd.  5, B.Tolmachevsky per., Moscow 119017, Russia
Tel: (7 495)956-0918, fax: (7 495)956-4944
E-mail:
sales@girmet.com