GaP
TGS DTGS
ADTGS
|
 GaP
Gallium Phosphide
Standard specifications
(Materials per Standard Data Sheets as well as customized single crystals and wafers with non-standard specifications)
SINGLE CRYSTALS
| dopant |
undoped |
S
|
Zn |
| conductivity type |
n |
n |
p |
| carrier concentration, cm -3 |
≤1x1016 |
1x1017 - 2x1018
| 2x1017 - 2x1018 |
| Mobility, m2/V.s |
≥100 |
≥60 |
≥60 |
| EPD, cm-2 |
≥2x105 |
≥2x105 |
≥2x105 |
WAFERS
| diameter, mm |
50.8 ± 0.3 |
76.2 ± 0.3 |
| thickness, micron |
300 ± 15 |
400 ± 15 |
| surface orientation |
(100) |
(111) |
| tolerance |
± 0.5° |
± 0.1° |
| Off-orientation |
(1 - 10)± 0.1° toward specified face |
| flats |
Standard SEMI M9, US SEMI, E/J SEMI |
surface finish
  face side
back side |
polished, epi-ready
polished, lapped 7 etched |
| packing |
single wafer in single conteiner |
Optical properties |
