III-V SEMICONDUCTOR CRYSTALS & WAFERS


GIRMET Ltd. offers a wide range of III-V semiconductor materials for electronics and optics: Gallium Arsenide, Gallium Phosphide, Indium Arsenide, Gallium Antimonide, Indium Antimonide.  Materials supplied are ingots and single crystal wafers including the "epi-ready" substrates (ready for epitaxial growth) . The high qualified staff and wide experience in field of material science and semiconductor processing provides the competitive products and reasonable prices.
GIRMET provides materials according to Standard Data Sheets as well as customized single crystals and wafers with non-standard specifications. 

Single crystals and wafers

Gallium Arsenide, Gallium Phosphide, Indium Arsenide, Gallium Antimonide, Indium Antimonide wafer subsrtate crystal

GaAs

SI

undoped

LEC
VGF

SI – semiinsulating
SC – semiconducting

Growth method:
LEC – liquid encapsulated Czochralski,
CZ – Czochralski.
VGF-vertical gradient freeze

SC

n-, p-
type

LEC
VGF

GaP

SC
SI

n-, p-, i-
type

LEC

InAs

SC

n-, p-
type

LEC

GaSb

SC

n-, p-
type

CZ

InSb

SC

n-, p-
type

CZ

Special materials and items

Gallium Arsenide, Gallium Phosphide, Indium Arsenide, Gallium Antimonide, Indium Antimonide wafer subsrtate crystal

Standard Data Sheets: GaAs, GaP, InAs, GaSb, InSb, poly GaAs


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GIRMET Ltd.  5, B.Tolmachevsky per., Moscow 119017, Russia
Tel: (7 495)956-0918, fax: (7 495)956-4944
E-mail: sales@girmet.com